Infineon IKW20N60TFKSA1

Infineon · Thyristors & Power Discretes · MPN IKW20N60TFKSA1

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Specifications

Pd - Power Dissipation-
Operating Temperature-
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Vce Saturation(VCE(sat))1.5V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)310uJ
Turn-On Energy (Eon)460uJ

Technical details

IGBT 600V 40A Through Hole TO-247-3

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