Infineon · Thyristors & Power Discretes · MPN IKW20N60T
No reviews yet — be the first to review Infineon IKW20N60T.
| Td(off) | 199ns |
|---|---|
| Pd - Power Dissipation | 166W |
| Td(on) | 18ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 32pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@290uA |
| Vce Saturation(VCE(sat)) | 2.05V@20A,15V |
| Reverse Recovery Time(trr) | 41ns |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 310uJ |
166W 20A 600V TO-247 Single IGBTs RoHS