Infineon · Thyristors & Power Discretes · MPN IKW20N60H3
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| Td(off) | 194ns |
|---|---|
| Pd - Power Dissipation | 170W |
| Td(on) | 17ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 32pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.29mA |
| Vce Saturation(VCE(sat)) | 2.4V@20A,15V |
| Reverse Recovery Time(trr) | 112ns |
| Switching Energy(Eoff) | 240uJ |
170W 40A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS