Infineon · Thyristors & Power Discretes · MPN IKW15N120H3FKSA1
No reviews yet — be the first to review Infineon IKW15N120H3FKSA1.
| Td(off) | 260ns |
|---|---|
| Pd - Power Dissipation | 217W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,15A |
| Gate Charge(Qg) | 75nC |
| Reverse Recovery Time(trr) | 260ns |
| Switching Energy(Eoff) | 1.55mJ |
IGBT FS (Field Stop) 1.2kV 30A 217W Through Hole TO-247-3