Infineon IKW08T120

Infineon · Thyristors & Power Discretes · MPN IKW08T120

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Specifications

Pd - Power Dissipation70W
Td(off)450ns
Operating Temperature-40℃~+150℃
Td(on)40ns
Current - Collector(Ic)16A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)28pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@0.3mA
Vce Saturation(VCE(sat))2.2V@8A,15V
Reverse Recovery Time(trr)80ns
Switching Energy(Eoff)700uJ

Technical details

70W 16A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS

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