Infineon · Thyristors & Power Discretes · MPN IKW03N120H
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| Td(off) | 281ns |
|---|---|
| Pd - Power Dissipation | 62.5W |
| Td(on) | 9.2ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 9.6A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,3A |
| Gate Charge(Qg) | 22nC |
| Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 150uJ |
62.5W 9.6A 1.2kV TO-247-3 Single IGBTs RoHS