Infineon IKU04N60R

Infineon · Thyristors & Power Discretes · MPN IKU04N60R

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Specifications

Pd - Power Dissipation75W
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)8A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)43ns
Turn-On Energy (Eon)-

Technical details

75W 8A 600V TO-251-3 Single IGBTs RoHS

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