Infineon · Thyristors & Power Discretes · MPN IKQB200N75CP2AKSA1
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| Td(off) | 407ns |
|---|---|
| Pd - Power Dissipation | 937W |
| Td(on) | 95ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 750V |
| Input Capacitance(Cies) | 21.28nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.6mA |
| Gate Charge(Qg) | 797nC@200A,15V |
| Vce Saturation(VCE(sat)) | 1.65V@200A,15V |
| Reverse Recovery Time(trr) | 239ns |
| Switching Energy(Eoff) | 6.9mJ |
IGBT 750V 200A 937W Through Hole TO-247-3