Infineon IKQB160N75CP2AKSA1

Infineon · Thyristors & Power Discretes · MPN IKQB160N75CP2AKSA1

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Specifications

Td(off)324ns
Pd - Power Dissipation250W
Td(on)72ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)750V
Input Capacitance(Cies)16.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@2.15mA
Vce Saturation(VCE(sat))1.65V@160A,15V
Gate Charge(Qg)610nC@160A,15V
Reverse Recovery Time(trr)255ns
Switching Energy(Eoff)5.2mJ

Technical details

IGBT 750V 200A 250W Through Hole TO-247-3

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