Infineon IKQB120N75CP2AKSA1

Infineon · Thyristors & Power Discretes · MPN IKQB120N75CP2AKSA1

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Specifications

Pd - Power Dissipation577W
Td(off)285ns
Td(on)57ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)750V
Input Capacitance(Cies)12.98nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@1.6mA
Vce Saturation(VCE(sat))1.65V@120A,15V
Gate Charge(Qg)481nC@120A,15V
Reverse Recovery Time(trr)259ns
Switching Energy(Eoff)3.4mJ

Technical details

IGBT 750V 150A 577W Through Hole TO-247-3

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