Infineon · Thyristors & Power Discretes · MPN IKQ75N120CS7XKSA1
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| Pd - Power Dissipation | 630W |
|---|---|
| Td(on) | 38ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 154A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 11.2nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1.5mA |
| Vce Saturation(VCE(sat)) | 2V@75A,15V |
| Gate Charge(Qg) | 450nC@75A,15V |
| Reverse Recovery Time(trr) | 193ns |
| Switching Energy(Eoff) | 3.48mJ |
| Turn-On Energy (Eon) | 5.13mJ |
IGBT 1.2kV 154A 630W Through Hole TO-247-3