Infineon IKQ75N120CH3

Infineon · Thyristors & Power Discretes · MPN IKQ75N120CH3

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Specifications

Td(off)282ns
Pd - Power Dissipation938W
Td(on)34ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)4.856nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@2.6mA
Vce Saturation(VCE(sat))2.35V@75A,15V
Gate Charge(Qg)370nC@15V
Reverse Recovery Time(trr)370ns
Switching Energy(Eoff)2.8mJ
Turn-On Energy (Eon)6.4mJ

Technical details

IGBT 1.2kV 150A 938W Through Hole TO-247-3

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