Infineon · Thyristors & Power Discretes · MPN IKQ50N120CT2XKSA1
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| Pd - Power Dissipation | 652W |
|---|---|
| Td(off) | 312ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 34ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A |
| Gate Charge(Qg) | 235nC |
| Switching Energy(Eoff) | 3.3mJ |
| Turn-On Energy (Eon) | 3.8mJ |
652W 100A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS