Infineon IKQ50N120CH7XKSA1

Infineon · Thyristors & Power Discretes · MPN IKQ50N120CH7XKSA1

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Specifications

Pd - Power Dissipation398W
Td(off)323ns
Td(on)40ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)71A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)6.6nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@0.8mA
Vce Saturation(VCE(sat))2.15V@50A,15V
Gate Charge(Qg)366nC@50A,15V
Reverse Recovery Time(trr)133ns
Switching Energy(Eoff)1.1mJ

Technical details

IGBT 1.2kV 71A 398W Through Hole TO-247-3

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