Infineon · Thyristors & Power Discretes · MPN IKQ50N120CH3XKSA1
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| Td(off) | 297ns |
|---|---|
| Pd - Power Dissipation | 652W |
| Td(on) | 34ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1.7mA |
| Vce Saturation(VCE(sat)) | 2.35V@50A,15V |
| Reverse Recovery Time(trr) | 240ns |
| Switching Energy(Eoff) | 1.9mJ |
| Turn-On Energy (Eon) | 3mJ |
IGBT 1.2kV 100A 652W Through Hole TO-247-3