Infineon · Thyristors & Power Discretes · MPN IKQ150N65EH7XKSA1
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| Pd - Power Dissipation | 621W |
|---|---|
| Td(off) | 341ns |
| Td(on) | 45ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 8.128nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@1.32mA |
| Vce Saturation(VCE(sat)) | 1.65V@150A,15V |
| Gate Charge(Qg) | 301nC@150A,15V |
| Reverse Recovery Time(trr) | 84ns |
| Switching Energy(Eoff) | 5.4mJ |
IGBT 650V 160A 621W Through Hole TO-247-3