Infineon · Thyristors & Power Discretes · MPN IKQ120N65EH7XKSA1
No reviews yet — be the first to review Infineon IKQ120N65EH7XKSA1.
| Td(off) | 287ns |
|---|---|
| Pd - Power Dissipation | 498W |
| Td(on) | 38ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 6.644nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@1.05mA |
| Vce Saturation(VCE(sat)) | 1.65V@120A,15V |
| Gate Charge(Qg) | 251nC@120A,15V |
| Reverse Recovery Time(trr) | 82ns |
| Switching Energy(Eoff) | 3.7mJ |
IGBT 650V 160A 498W Through Hole TO-247-3