Infineon · Thyristors & Power Discretes · MPN IKQ120N120CH7XKSA1
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| Td(off) | 544ns |
|---|---|
| Pd - Power Dissipation | 780W |
| Td(on) | 63ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 170A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 15.8nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@1.92mA |
| Gate Charge(Qg) | 834nC@120A,15V |
| Vce Saturation(VCE(sat)) | 2.15V@120A,15V |
| Reverse Recovery Time(trr) | 146ns |
| Switching Energy(Eoff) | 2.95mJ |
IGBT 1.2kV 170A 780W Through Hole TO-247-3