Infineon · Thyristors & Power Discretes · MPN IKQ100N120CH7XKSA1
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| Td(off) | 547ns |
|---|---|
| Pd - Power Dissipation | 721W |
| Td(on) | 66ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 166A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 13nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@1.6mA |
| Gate Charge(Qg) | 696nC@100A,15V |
| Vce Saturation(VCE(sat)) | 2.15V@100A,15V |
| Reverse Recovery Time(trr) | 148ns |
IGBT 1.2kV 166A 721W Through Hole TO-247-3