Infineon · Thyristors & Power Discretes · MPN IKP39N65ES5XKSA1
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| Td(off) | 120ns |
|---|---|
| Pd - Power Dissipation | 188W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 62A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.8nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.39mA |
| Vce Saturation(VCE(sat)) | 1.85V@39A,15V |
| Gate Charge(Qg) | 70nC@39A,15V |
| Reverse Recovery Time(trr) | 84ns |
| Switching Energy(Eoff) | 500uJ |
IGBT 650V 62A 188W Through Hole TO-220-3