Infineon · Thyristors & Power Discretes · MPN IKP20N65H5
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| Td(off) | 156ns |
|---|---|
| Pd - Power Dissipation | 125W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 18ns |
| Current - Collector(Ic) | 42A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@200uA |
| Vce Saturation(VCE(sat)) | 1.65V@20A,15V |
| Reverse Recovery Time(trr) | 52ns |
| Switching Energy(Eoff) | 60uJ |
| Turn-On Energy (Eon) | 170uJ |
IGBT 650V 42A 125W Through Hole TO-220-3