Infineon IKP15N65F5

Infineon · Thyristors & Power Discretes · MPN IKP15N65F5

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Specifications

Td(off)150ns
Pd - Power Dissipation105W
Td(on)17ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)4pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.15mA
Vce Saturation(VCE(sat))2.1V@15A,15V
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)40uJ
Turn-On Energy (Eon)130uJ

Technical details

105W 30A 650V TO-220-3 Single IGBTs RoHS

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