Infineon · Thyristors & Power Discretes · MPN IKN04N60RC2ATMA1
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| Td(off) | 126ns |
|---|---|
| Pd - Power Dissipation | 6.8W |
| Td(on) | 8ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 7.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,4A |
| Gate Charge(Qg) | 24nC |
| Reverse Recovery Time(trr) | 39ns |
| Switching Energy(Eoff) | 62uJ |
6.8W 7.5A 600V SOT-223-3 Single IGBTs RoHS