Infineon · Thyristors & Power Discretes · MPN IKN01N60RC2ATMA1
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| Td(off) | 80ns |
|---|---|
| Pd - Power Dissipation | 5.1W |
| Td(on) | 5.6ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 2.2A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 2.5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,1A |
| Vce Saturation(VCE(sat)) | 2.3V@1A,15V |
| Reverse Recovery Time(trr) | 59.5ns |
| Switching Energy(Eoff) | 13.5uJ |
5.1W 2.2A 600V SOT-223-3 Single IGBTs RoHS