Infineon IKFW90N60EH3

Infineon · Thyristors & Power Discretes · MPN IKFW90N60EH3

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Specifications

Pd - Power Dissipation178W
Td(off)210ns
Td(on)32ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)77A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)127pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@1.2mA
Vce Saturation(VCE(sat))2.3V@75A,15V
Collector Cut-Off Current (Ices)40uA
Reverse Recovery Time(trr)107ns
Switching Energy(Eoff)1.3mJ

Technical details

178W 77A 600V TO-247-3-AI Single IGBTs RoHS

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