Infineon · Thyristors & Power Discretes · MPN IKFW75N65EH5XKSA1
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| Td(off) | 206ns |
|---|---|
| Pd - Power Dissipation | 148W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,60A |
| Gate Charge(Qg) | 144nC |
| Reverse Recovery Time(trr) | 75ns |
| Turn-On Energy (Eon) | 1.8mJ |
148W 80A 650V FS (Field Stop) HSIP247-3 Single IGBTs RoHS