Infineon · Thyristors & Power Discretes · MPN IKFW75N60ET
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| Td(off) | 340ns |
|---|---|
| Pd - Power Dissipation | 178W |
| Td(on) | 33ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 127pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@1.2mA |
| Vce Saturation(VCE(sat)) | 1.5V@75A,15V |
| Reverse Recovery Time(trr) | 107ns |
| Switching Energy(Eoff) | 2.35mJ |
| Turn-On Energy (Eon) | 2.7mJ |
178W 80A 600V TO-247-3-AI Single IGBTs RoHS