Infineon · Thyristors & Power Discretes · MPN IKFW60N65ES5XKSA1
No reviews yet — be the first to review Infineon IKFW60N65ES5XKSA1.
| Td(off) | 127ns |
|---|---|
| Pd - Power Dissipation | 138W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 77A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A |
| Gate Charge(Qg) | 120nC |
| Reverse Recovery Time(trr) | 77ns |
| Switching Energy(Eoff) | 550uJ |
138W 77A 650V FS (Field Stop) HSIP247-3 Single IGBTs RoHS