Infineon IKFW60N60DH3E

Infineon · Thyristors & Power Discretes · MPN IKFW60N60DH3E

No reviews yet — be the first to review Infineon IKFW60N60DH3E.

Specifications

Td(off)170ns
Pd - Power Dissipation141W
Td(on)23ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)53A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)67pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@0.58mA
Vce Saturation(VCE(sat))2.7V@50A,15V
Reverse Recovery Time(trr)68ns
Switching Energy(Eoff)720uJ
Turn-On Energy (Eon)1.57mJ

Technical details

141W 53A 600V TO-247-3-AI Single IGBTs RoHS

Related Thyristors & Power Discretes