Infineon · Thyristors & Power Discretes · MPN IKFW50N60DH3E
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| Pd - Power Dissipation | 130W |
|---|---|
| Td(off) | 174ns |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 48pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V |
| Vce Saturation(VCE(sat)) | 2.2V |
| Collector Cut-Off Current (Ices) | 440uA |
| Reverse Recovery Time(trr) | 64ns |
| Switching Energy(Eoff) | 560uJ |
130W 40A 600V HSIP-247-3 Single IGBTs RoHS