Infineon · Thyristors & Power Discretes · MPN IKFW40N65ES5XKSA1
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| Td(off) | 124ns |
|---|---|
| Pd - Power Dissipation | 106W |
| Td(on) | 17ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,30A |
| Gate Charge(Qg) | 70nC |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 320uJ |
106W 60A 650V FS (Field Stop) HSIP247-3 Single IGBTs RoHS