Infineon · Thyristors & Power Discretes · MPN IKD15N60RAATMA1
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 183ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 16ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 90nC |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
250W 30A 600V TO-252-3 Single IGBTs RoHS