Infineon · Thyristors & Power Discretes · MPN IKD10N60RFATMA1
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| Td(off) | 168ns |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,10A |
| Gate Charge(Qg) | 64nC |
| Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 160uJ |
150W 20A 600V FS (Field Stop) TO-252-3 Single IGBTs RoHS