Infineon · Thyristors & Power Discretes · MPN IKD10N60RC2ATMA1
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| Td(off) | 250ns |
|---|---|
| Pd - Power Dissipation | 79W |
| Td(on) | 14ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 18.8A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,10A |
| Gate Charge(Qg) | 48nC |
| Reverse Recovery Time(trr) | 104ns |
| Switching Energy(Eoff) | 170uJ |
IGBT FS (Field Stop) 600V 18.8A 79W Surface Mount TO-252