Infineon · Thyristors & Power Discretes · MPN IKD08N65ET6ARMA1
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| Td(off) | 59ns |
|---|---|
| Pd - Power Dissipation | 47W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 15A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 17nC |
| Reverse Recovery Time(trr) | 43ns |
| Switching Energy(Eoff) | 40uJ |
47W 15A 650V FS (Field Stop) TO-252-3 Single IGBTs RoHS