Infineon · Thyristors & Power Discretes · MPN IKD06N60RF
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| Pd - Power Dissipation | 100W |
|---|---|
| Td(off) | 106ns |
| Td(on) | 7ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 470pF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.11mA |
| Vce Saturation(VCE(sat)) | 2.5V@6A,15V |
| Gate Charge(Qg) | 48nC@15V |
| Reverse Recovery Time(trr) | 48ns |
| Switching Energy(Eoff) | 90uJ |
IGBT 600V 6A 100W Surface Mount TO-252