Infineon · Thyristors & Power Discretes · MPN IKD06N60RC2ATMA1
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| Pd - Power Dissipation | 51.7W |
|---|---|
| Td(off) | 129ns |
| Td(on) | 6ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 11.7A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.65mA |
| Vce Saturation(VCE(sat)) | 2.3V@6A,15V |
| Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 80uJ |
| Turn-On Energy (Eon) | 170uJ |
IGBT FS (Field Stop) 600V 11.7A 51.7W Surface Mount TO-252