Infineon · Thyristors & Power Discretes · MPN IKD04N60RF
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| Pd - Power Dissipation | 75W |
|---|---|
| Td(off) | 116ns |
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 9.1A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.07mA |
| Vce Saturation(VCE(sat)) | 2.5V@4A,15V |
| Reverse Recovery Time(trr) | 34ns |
| Switching Energy(Eoff) | 50uJ |
| Turn-On Energy (Eon) | 60uJ |
75W 9.1A 600V TO-252-3 Single IGBTs RoHS