Infineon · Thyristors & Power Discretes · MPN IKD04N60R
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| Td(off) | 146ns |
|---|---|
| Pd - Power Dissipation | 75W |
| Td(on) | 14ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 4A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 1.65V |
| Reverse Recovery Time(trr) | 43ns |
| Collector Cut-Off Current (Ices) | 40uA |
| Switching Energy(Eoff) | 150uJ |
75W 4A 600V TO-252 Single IGBTs RoHS