Infineon · Thyristors & Power Discretes · MPN IKD03N60RFAATMA1
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| Td(off) | 128ns |
|---|---|
| Pd - Power Dissipation | 53.6W |
| Td(on) | 10ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 5A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 17.1nC |
| Reverse Recovery Time(trr) | 31ns |
53.6W 5A 600V TO-252-3 Single IGBTs RoHS