Infineon · Thyristors & Power Discretes · MPN IKB40N65ES5
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| Pd - Power Dissipation | 230W |
|---|---|
| Td(off) | 130ns |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.7V@40A,15V |
| Reverse Recovery Time(trr) | 73ns |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 860uJ |
230W 50A 650V TO-263-3 Single IGBTs RoHS