Infineon · Thyristors & Power Discretes · MPN IKB20N65EH5
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 125W |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 5pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.2mA |
| Vce Saturation(VCE(sat)) | 2.1V@20A,15V |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 130uJ |
| Turn-On Energy (Eon) | 560uJ |
125W 25A 650V TO-263-3 Single IGBTs RoHS