Infineon · Thyristors & Power Discretes · MPN IKB20N60TATMA1
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| Td(off) | 199ns |
|---|---|
| Pd - Power Dissipation | 166W |
| Td(on) | 18ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 41A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 1.1nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@290uA |
| Gate Charge(Qg) | 120nC |
| Vce Saturation(VCE(sat)) | 2.05V@20A,15V |
| Reverse Recovery Time(trr) | 41ns |
| Switching Energy(Eoff) | 460uJ |
IGBT 600V 41A 166W Surface Mount TO-263-3