Infineon · Thyristors & Power Discretes · MPN IKB15N65EH5
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| Td(off) | 145ns |
|---|---|
| Pd - Power Dissipation | 105W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 16ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 4pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@150uA |
| Vce Saturation(VCE(sat)) | 1.65V@15A,15V |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 80uJ |
105W 30A 650V TO-263-3 Single IGBTs RoHS