Infineon · Thyristors & Power Discretes · MPN IKB06N60T
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| Pd - Power Dissipation | 88W |
|---|---|
| Td(off) | 130ns |
| Td(on) | 9ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.18mA |
| Vce Saturation(VCE(sat)) | 2.05V@6A,15V |
| Reverse Recovery Time(trr) | 123ns |
| Switching Energy(Eoff) | 110uJ |
88W 6A 600V FS (Field Stop) TO-263-3 Single IGBTs RoHS