Infineon IKA15N65ET6

Infineon · Thyristors & Power Discretes · MPN IKA15N65ET6

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Specifications

Pd - Power Dissipation35.3W
Td(off)117ns
Td(on)30ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)34A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@0.2mA
Vce Saturation(VCE(sat))1.9V@11.5A,15V
Reverse Recovery Time(trr)69ns
Switching Energy(Eoff)110uJ
Turn-On Energy (Eon)230uJ

Technical details

35.3W 34A 650V TO-220FP Single IGBTs RoHS

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