Infineon · Thyristors & Power Discretes · MPN IKA10N65ET6
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| Td(off) | 106ns |
|---|---|
| Pd - Power Dissipation | 32.5W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 12pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@0.15mA |
| Vce Saturation(VCE(sat)) | 1.9V@8.5A,15V |
| Reverse Recovery Time(trr) | 51ns |
| Switching Energy(Eoff) | 70uJ |
| Turn-On Energy (Eon) | 200uJ |
32.5W 25A 650V TO-220-3 Single IGBTs RoHS