Infineon · Thyristors & Power Discretes · MPN IKA08N65H5
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| Pd - Power Dissipation | 31.2W |
|---|---|
| Td(off) | 115ns |
| Td(on) | 11ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 10.8A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Vce Saturation(VCE(sat)) | 2.1V@8A,15V |
| Reverse Recovery Time(trr) | 40ns |
| Switching Energy(Eoff) | 30uJ |
| Turn-On Energy (Eon) | 70uJ |
31.2W 10.8A 650V TO-220FP-3 Single IGBTs RoHS