Infineon IKA08N65F5

Infineon · Thyristors & Power Discretes · MPN IKA08N65F5

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Specifications

Pd - Power Dissipation31.2W
Td(off)116ns
Td(on)9ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)10.8A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)3pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.08mA
Vce Saturation(VCE(sat))2.1V@8A,15V
Reverse Recovery Time(trr)41ns
Switching Energy(Eoff)20uJ
Turn-On Energy (Eon)70uJ

Technical details

31.2W 10.8A 650V TO-220FP-3 Single IGBTs RoHS

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