Infineon · Thyristors & Power Discretes · MPN IKA08N65ET6XKSA1
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| Pd - Power Dissipation | 33W |
|---|---|
| Td(off) | 59ns |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 11A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 8pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@0.12mA |
| Vce Saturation(VCE(sat)) | 1.9V@5A,15V |
| Reverse Recovery Time(trr) | 43ns |
| Switching Energy(Eoff) | 40uJ |
33W 11A 650V FS (Field Stop) TO-220-3 Single IGBTs RoHS